Narrow Gap Semiconductors and Related Materials

Part 1 Device: Brief survey of narrow-gap semiconductors, with particular reference to alpha-Sn and alpha-Sn-Ge alloys; design of III-V quantum well structures for long-wavelength detector applications; physics and applications of IV-VI compound semiconductor lasers; multiple quantum wells and superlattices as novel infrared sources; MOCVD-growth InAsSb strained-layer superlattice infrared detectors with photoresponses; PbS/PbSSe/PbSnSe heterostructure laser with a quantum-well active region. Part 2 Device: non-equilibrium modes of operation of narrow-gap semiconductor devices; effects of residual Shockley-Red traps on the efficiency of auger suppressd IR detector diodes; surface and implantation effects on p-n junctions; high-temperature long-wavelength photoconductors; P-on-N arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs; epitaxial lead chalcogenide IR sensors on Si for 3-5 micrometers and 8-12 micrometers. Part 3 II-VI general:novel free-carrier-induced optical nonlinearities of narrow-gap semiconductors; investigation of phonons in HgCdTe using Raman scattering and far infra-red reflectivity; Raman studies of composition and structural ordering in Hg(1-x)Cd(x)Te; resonance Raman-scattering study of narrow-gap Hg(1-x)Cd(x)Te; structural energies of defects in CdTe and HgCdTe; vacancies and surface segregation in HgCdTe and HgZnTe. Part 4 II-VI (two-dimension): narrow-gap II-VI superlattices - correlation of theory with experiment; band structures of HgCdTe alloys and superlattices; far infrared magneto-optical study of holes and electrons in zero-gap HgTe/Cd(0.85)Hg(0.15)Te superlattices; far-infrared band and characterization measurmentsin the HgTe/CdTe superlattice; sub-band and resonant level spectroscopy from capacitance measurements; the evaluation of electron spin splitting of surface sub-bands on HgCdTe; observation of incoherent tunnelling in HgCdTe MIS structure. Part 5 IV_VI (DMS): physics and applications of IV-VI compound quantum well and superlattice structures; carrier concentration dependence of the magnetic interactions in Sn(Mn)Te; high-field magnetization of IV-VI diluted magnetic semiconductors; compositional dependence of the band structure and magnetic properties of PbSnMnTe narrow-gap semimagnetic semiconductor. Part 6 IV-VI (DMS and miscellaneous): g factor spectroscopy in narrow-gap semiconductors by optical four wave mixing; coherent Raman scattering and magneto-optical interband transitions in diluted magnetic IV-VI compounds; anomalous magneto-transport and optical transmission of PbTe thin films;wavelength dependenceof persistent photoconductivity in indium-doped Pb(1-x)Sn(x)Te; far infra-red spin resonance in narrow-gap semiconductors; phonon-assisted magneto-donor optical transitions in n-InSb. (Part contents).