Silicon Photonics IV

David J. Lockwood obtained his Ph.D. in physics from Canterbury University (Cantuar), New Zealand in 1969, and he was awarded a D.Sc. in 1978 from Edinburgh University, U.K. and a D.Sc. from Canterbury University in 2000 for his work on the electronic, optical, and magnetic properties of solids. He carried out post-doctoral work in physical chemistry at Waterloo University, Canada (19701971), and was a Research Fellow in Edinburgh University (19721978) before joining the National Research Council (NRC) of Canada in 1978 where he is presently a Researcher Emeritus. At NRC, Lockwoods research has centered on the optical properties of low dimensional materials and recently has focused on Group IV and III-V semiconductor quantum dots and transition-metal magnetic nanostructures. Lockwood has published more than 650 scientific articles in journals and books and has 6 U.S. patents. He is a Fellow of the Royal Society of Canada, the American Physical Society, the Institute of Physics, andthe Electrochemical Society and served on the editorial boards of 6 physics journals as well as being the founding editor of the Springer-Nature book series Nanostructure Science and Technology. In 2005 he was awarded the Brockhouse Medal of the Canadian Association of Physicists for outstanding achievement in condensed matter and materials physics and the Tory Medal of the Royal Society of Canada for outstanding research in any branch of astronomy, chemistry, mathematics, physics, or an allied science. In 2008 he received the Exact and Natural Sciences Award of the Academy of Sciences of Cuba, in 2010 the Centennial Outstanding Achievement Award of the Electrochemical Society, and in 2011 the Lifetime Achievement Award of the Canadian Semiconductor Science and Technology Conference. In October 2012, a Symposium in his honour was held at the Electrochemical Society Fall Meeting in Honolulu. In 2013 he was awarded the Gold Medal for Lifetime Achievement in Physics from the Canadian Association of Physicists for his distinguished and sustained contributions to the elucidation of the optical properties of solids, low-dimensional semiconductor systems, and in particular light-emission from silicon, as well as his contributions to the advancement of physics in Canada and worldwide. He is the 2019 recipient of the prestigious Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology, which was established by the Electrochemical Society in 1971. The award recognizes his outstanding original contributions to the elucidation of the role of quantum-confinement effects in the optical and electrochemical properties of semiconductor nanostructures with applications in optoelectronics and photonics. Lorenzo Pavesi is Professor of Experimental Physics at the University of Trento, Italy. He received his PhD in Physics in 1990 at the Ecole Polytechnique Federale of Lausanne (Switzerland). In 1990 he became Assistant Professor, Associate Professor in 1999 and Full Professor in 2002 at the University of Trento. He currently leads the Nanoscience Laboratory. He was the first president and founder of the IEEE italian chapter on Nanotechnology. He has directed 39 PhD students and more than 30 Master thesis students. His research activity concerned the optical properties of semiconductors. During the last years, he concentrated on Silicon based photonics where he looks for the convergence between photonics and electronics. He is interested in active photonics devices which can be integrated in silicon by using optical nolinearities and modified material properties. His interests encompass also optical sensors or biosensors. Recent development is toward integrated quantum photonics and neuromorphic photonics. In silicon photonics, he is one of the worldwide recognized experts, he organized several international conferences, workshops and schools and is a frequently invited speaker. He manages several research projects,both nation

PART 1: Advances in Fundamental Research.- Enhanced optical properties of Si nanocrystals.- Inversion-based lasing and Raman lasing in doped silicon.- Reduced graphene oxideGe quantum dot nanocomposites.- Stimulated emission in the near infrared from disordered Ge dots.- Lasing in strained Ge microbridges.- Obtaining efficient light emission from crystalline Ge nanostructures.- Spin-based light emission in group IV semiconductors.- Exceptional points sensing with silicon photonics.- Topological photonics in array of silicon microresonators.- Entangled photon generations in silicon photonics.- Sn lasing in silicon.- PART 2: New Technologies.- Parallel digital gradient search technique for rapid automated alignment of devices on silicon photonics integrated circuits.- All optical neural networks based on silicon optical chips.- Transformative optics in regard to planar silicon photonic devices for optical switching and optical computing techniques.- Subwavelength grating periodic structures in silicon-on-insulator technology.- Silicon photonics transceivers for data centers.